发明名称 |
Optoelectronic semiconductor device with mesa |
摘要 |
There are disclosed a low driving voltage surface emitting semiconductor laser and an optoelectronic integrated which comprises a two-dimensional array of such surface emitting semiconductor lasers which are modulatable with input signals of small voltage amplitudes. In an embodiment of the present invention, an optical semiconductor device includes a GaAs substrate 105, and an epitaxial growth layer structure on the GaAs substrate, the epitaxial growth layer structure including in the named order a p type GaAs/AlAs multilayer semiconductor mirror layer 104, an active layer 103 and an n type GaAs/AlAs multilayer semiconductor mirror layer 102. The epitaxial growth layer structure is etched to the depth of the active layer in forming a mesa, while the p type mirror layer remains unetched throughout a top surface of the semiconductor substrate.
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申请公布号 |
US5408105(A) |
申请公布日期 |
1995.04.18 |
申请号 |
US19930019223 |
申请日期 |
1993.02.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ADACHI, HIDEO;MATSUDA, KENICHI |
分类号 |
H01S5/026;H01S5/183;H01S5/42;(IPC1-7):H01L33/00 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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