SEMICONDUCTOR DEVICE

摘要

1,246,858. Semi-conductor devices. MITSUBISHI DENKI K.K. 23 Jan., 1969 [23 Jan., 1968], No. 3763/69. Heading H1K. The silicon PNN+ diode 18 is provided with evaporated and sintered ohmic aluminium contacts 24, 26 and is held in pressure contact between two flat tungsten support plates 34, 38 which may be aluminium faced 36, 40. This assembly is held between metal blocks 56, 70 forming part of a sealed housing also comprising a ceramic ring 52 with iron-cobalt-nickel flanges 58, 62 hard-soldered thereto and a resilient flange 72 argon-arc welded to the flange 62. The resilient flange may supply the necessary contact pressure in the system but external pressure may also be applied. The ohmic contacts may instead consist of other ductile metals, such as gold, silver or nickel; the support plates (which may be faced with the metal of the ohmic contacts) may instead be of molybdenum, tantalum, or iron-cobalt-nickel; the semi-conductor may instead be germanium or an AIIIBV compound; the body is strengthened by, e.g., a silicon ring 28 aluminium bonded to the body. Before mounting, the body is peripherally sand-blasted and etched and siliconevarnished. Transistors and thyristors may be similarly mounted.