| 摘要 |
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consists essentially of a single element semiconductor selected from the group of Si, Ge, C, and alpha -Sn, having a crystalline grain size which is smaller than polycrystalline. Dopant atoms in the semiconductor are limited to be less than 1017 atoms/CM3; and, such a doping range includes zero doping. Process temperatures are limited such that all dopant atoms are interstitial in the semiconductor crystals and not substitutional.
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