| 发明名称 |
Field effect transistor with landing pad |
| 摘要 |
A field effect transistor is fabricated with a window pad layer that is patterned using a patterned dielectric with sublithographic spacing as an etch mask. Desirable attributes of the transistor include small junction capacitance.
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| 申请公布号 |
US5407859(A) |
申请公布日期 |
1995.04.18 |
| 申请号 |
US19930159897 |
申请日期 |
1993.12.01 |
| 申请人 |
AT&T CORP. |
发明人 |
LEE, KUO-HUA;LIU, CHUN-TING;LIU, RUICHEN |
| 分类号 |
H01L21/336;H01L21/768;H01L29/78;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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