发明名称 |
Method of making a thin film transistor |
摘要 |
This is a method of fabricating a transistor on a wafer. The method comprises: forming a doped silicon layer; patterning the active transistor regions of the doped silicon layer and utilizing a silicon etch to remove the non-transistor regions of the doped silicon layer to create a silicon mesa; forming a gate oxide layer on a doped silicon mesa; depositing a polysilicon layer on top of the oxide layer; depositing a photoresist layer over the polysilicon mesa; patterning the photoresist layer with a gate configuration; etching to remove portions of the polysilicon layer using the photoresist as a mask to create a polysilicon gate; depositing a TEOS layer over the polysilicon gate and exposed gate oxide; etching to remove portions of the TEOS layer and the exposed gate oxide to leave sidewall spacers on sides of the polysilicon gate and sides of silicon mesa; depositing a metal layer over remaining portions of the polysilicon gate, the sidewall spacers, and the silicon mesa; annealing the wafer to react portions of the metal layer with exposed portions of the silicon mesa to form a metal silicide; etching all unreacted the metal layer to leave the silicided portions of the polysilicon gate and silicided portion of the doped silicon layer.
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申请公布号 |
US5407837(A) |
申请公布日期 |
1995.04.18 |
申请号 |
US19930108357 |
申请日期 |
1993.08.18 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EKLUND, ROBERT H. |
分类号 |
H01L21/336;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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