| 摘要 |
There is provided a semiconductor device wherein a resistor layer is interposed between a semiconductor region and a surface electrode metal so as to improve a safe operation area of the device and enhance the secondary breakdown strength thereof, and a method for producing such a semiconductor device including steps of forming a n-type semiconductor region and/or a p-type semiconductor region in a semiconductor substrate by impurity doping; forming contact holes in a protective film formed on the semiconductor substrate; forming polysilicon electrode films on the semiconductor regions exposed in the contact holes, respectively; making respective impurities of the semiconductor regions diffuse into the polysilicon electrode films by a heat treatment; and forming a surface electrode metal on the polysilicon electrode films.
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