Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.
申请公布号
DE68918177(T2)
申请公布日期
1995.04.13
申请号
DE1989618177T
申请日期
1989.06.29
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, OSAKA, JP