| 摘要 |
PURPOSE:To enable formation of fine pattern which is strong to etching by O2 and has high accuracy by using a specific triallysilane monomer. CONSTITUTION:A resist material is synthesized from a polymer having the structural unit expressed by the formulas I -III by the radical polymn. of a triallysilane monomer. R in the formula denotes a hydrogen atom or a lower alkyl group such as methyl group, ethyl group or propyl group, or a phenyl group. If 0.1-50wt% bis-azide compd. is mixed with such polymer, the resist material has high sensitivity with UV rays. Even if the bis-azide is not used, the material has high sensitivity with electron rays, X-rays and deep UV rays. The material is effective as a mask when the material is formed into a film strong to reactive sputter etching by O2. |
