A semiconductor device includes a metallic electrode (4) formed on a semiconductor substrate (1), and a metallic terminal (11E) formed on a metal base through an insulating material, in parallel to the metal electrode (4). A metallic wire (12) electrically connects the metallic electrode to the metallic terminal. In a metallic conductor (23) having a current capacity larger than that of the metallic wire, one end is in contact with the metallic electrode, and the other end is in contact with the metallic electrode.
申请公布号
DE68919263(T2)
申请公布日期
1995.04.13
申请号
DE1989619263T
申请日期
1989.04.05
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
SAEKI, SHUZO C/O PATENT DIVISION, MINATO-KU TOKYO 105, JP;HIDESHIMA, MAKOTO C/O PATENT DIVISION, MINATO-KU TOKYO 105, JP