| 摘要 |
PURPOSE:To obtain a semiconductor device having a local wiring which can deal with fine patterning of element while suppressing the parasitic resistance of source and drain and the junction leakage by forming a connection conductor pattern in an opening made through an insulation film and the periphery thereof such that the conductor pattern touches a conductive part only within the opening. CONSTITUTION:The semiconductor device comprises a plurality of semiconductor elements TR formed on semiconductor substrates 10, 11, an insulation film 37 covering a conductive part constituting the semiconductor element TR, and an opening 46 made through the insulation film 37 in a region covering a different conductive part. A connection conductor pattern 31 is formed at least in the opening 46 and on the peripheral insulation film 37 such that the pattern 31 touches a plurality of conductive parts only within the opening 46. For example, at least a part of the semiconductor element TR is a MOS transistor and the gate electrode 14q thereof is connected with the diffusion layer 14d of the semiconductor substrates 10, 11 through the connection conductor pattern 31. |
