发明名称 |
THIN FILM TRANSISTOR AND DISPLAY USING THE SAME |
摘要 |
<p>PURPOSE:To achieve a higher ON/OFF current ratio by restricting an optical leakage current Ioff to a sufficiently small value. CONSTITUTION:In a thin film transistor 171, at least one interval among shortest intervals from an arbitrary intersection of a contour line of a gate electrode 131 and a contour line of a drain electrode 141 to an intersection of the contour line of the gate electrode 131 and a contour line of a source electrode 151 is greater than a shortest interval of an overlapped portion with the drain electrode 141 among the contour lines of the gate electrode 131 and an verlapped portion with the source electrode 151 among the same.</p> |
申请公布号 |
JPH0794753(A) |
申请公布日期 |
1995.04.07 |
申请号 |
JP19940081815 |
申请日期 |
1994.04.20 |
申请人 |
TOSHIBA CORP |
发明人 |
MIURA YASUNORI;SHIBUSAWA MAKOTO;SUGAWARA ATSUSHI;SEIKI MASAHIRO |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/423;H01L29/78;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|