| 摘要 |
PURPOSE:To provide a compound semiconductor crystal substrate manufacturing method by which the crystal defect density of a III-V compound semiconductor layer of GaAs, etc., grown on the surface of an Si substrate can be reduced to 1X10<6>cm<-2> or less. CONSTITUTION:After epitaxially growing a III-V compound semiconductor crystal layer 2 of GaAs, etc., on the surface of an Si substrate 1 by MOCVD, etc., an amorphous III-V compound semiconductor layer 3 of GaAs, etc., is grown on the layer 2. Then, after annealing the layers 2 and 3, part of the layer 2 including the layer 3 is removed by mechanical and chemical polishing, etc. After removing the part of the layer 2, a new III-V compound semiconductor crystal layer 4 of GaAs, etc., is epitaxially grown on the layer 3.
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