发明名称 PATTERN EXPOSURE METHOD AND EXPOSURE DEVICE
摘要 <p>PURPOSE:To replace oxygen existing at the boundary between a mask and a work or next to the boundary with an inert gas in uniformly distributed state as rapidly as possible with good efficiency at the time of executing the shielding operation against oxygen by an inert gas substituting method in pattern exposure with a proximity exposure system. CONSTITUTION:This pattern exposure method and exposure device execute exposure in the following manner: The inert gas is injected into the spacing from the outside of the opposite spacing between the optical mask 1 and the work 4 by properly adjusting the distribution of the ejection rate of the inert gas from air nozzles 3 or/and the injection angle (rotating angle of an arrow direction) of the inert gas, by which the opposite boundary of the optical mask and the work is subjected to a treatment by replacement with the inert gas while the two-dimensional distribution of the ejection rate of the inert gas within the parallel opposite surfaces of the optical mask and the work is made uniform. Pattern exposure with UV rays or pattern exposure with electron beams is thereafter executed.</p>
申请公布号 JPH0792317(A) 申请公布日期 1995.04.07
申请号 JP19930239678 申请日期 1993.09.27
申请人 TOPPAN PRINTING CO LTD 发明人 HANAJIMA OSAMU;ISHII TOSHIMASA;OKADA HIROTO;MITA TOMOKO
分类号 G02B5/20;G03B27/32;G03F7/20;H01L21/027;(IPC1-7):G02B5/20 主分类号 G02B5/20
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