QUANTUM BOX MULTIPLE ELEMENTS AND THEIR MANUFACTURING METHOD

摘要

PURPOSE:To shorten the distance between quantum boxes by forming quantum boxes made of group IV element in a substrate and forming barrier layers made of the compound of group IV element and oxygen on it. CONSTITUTION:Silicon is selected as the group IV element and a semiconductor material layer is formed out of polysilicon. A laser pulse is directed to the semiconductor material layer 12 and melts it instantaneously. Then after the cooling, uniform and fine silicon semiconductor crystal particles 14 are formed. Quantum boxes 18 that consist of the semiconductor crystal particles 14 that are each separated by barrier layers 16 of oxide films made by oxidizing the surfaces of the semiconductor crystal particles 14. The controllability of oxidizing process of the surfaces of semiconductor crystal particle made of silicon is excellent. Therefore, the oxide films (the barrier films 16) of the thickness of several nm can be formed and the distances between the quantum boxes can be shortened very much.