| 摘要 |
PURPOSE:To obtain the semiconductor device wherein the selection stop operation of a word line to be made redundant or the like is operated at high speed without affecting an ordinary word-line selection operation and the higher-speed of a Bi-CMOS static RAM or the like provided with a redundancy changeover circuit is promoted. CONSTITUTION:In a Bi-CMOS static RAM or the like which is provided with a redundancy changeover circuit, e.g. a corresponding inverted main word line MW0B is formed as a so-called word line, to be made redundant, which is replaced by a redundant word line. At this time, a fuse F1 which sets in to a nonselection level in a fixed manner, i.e., a high level, is installed at the inside excluding the output signal route of a unit main-word-line drive circuit UMD0 or the like. Thereby, the fuse F1 which is provided with a comparatively large sheet resistance value is excluded from a word-line drive route, and a load capacity with reference to the fuse F1 can be made comparatively small. As a result, the selection stop operation of the word line to be made redundant can be performed at high speed without affecting an ordinary word-line selection operation. |
