发明名称 SEMICONDUCTOR MEMORY DEVICE AND DEFECTIVE-MEMORY-CELL RELIEF CIRCUIT
摘要 PURPOSE:To output a redundant-address coincidence signal stably and at high speed and to reduce an area occupied by a chip by a method wherein a redundant-address detection circuit and an redundant-address decoder which is provided with a redundant-address coincidence and noncoincidence signal generation function are installed. CONSTITUTION:Fuse decoders inside redundant-address decoders which are connected in common to a signal for an inverter generate a coincidence signal by judging that FUSEs 0-0, 0-1 are contents of a programmed address and of an address bus, or they judge that both are not coincident. An address- coincidence-signal generation circuit is composed of transistors 219 to 223 and of an inverter 226, and an address-noncoincidence-signal generation circuit is composed of a NAND logic gate 225. When an address coincidence signal RREN0 judges that both fuse decoders 0-0, 0-1 noncoincident by responding to an address signal input, its logic state is shifted from a high level to a low level. When any one of the fuse decoders generates a coincidence signal, the logic state is not changed.
申请公布号 JPH0793990(A) 申请公布日期 1995.04.07
申请号 JP19920207333 申请日期 1992.07.10
申请人 TEXAS INSTR JAPAN LTD;HITACHI LTD 发明人 SUKEGAWA SHUNICHI;SAEKI TETSUYA
分类号 H01L21/82;G11C29/00;G11C29/04;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L21/82
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