| 摘要 |
<p>PURPOSE:To provide a higher emission efficiency, a smaller emitter resistance and gate current and better anode heat radiation by specifically forming an emitter laminated, layer-to-layer insulation films, a gate and the end of the anode in an opening cavity. CONSTITUTION:An emitter 90 in two layers of a lower layer 82a and an upper layer 83a made of high-melting-point metal is formed on a heavily boron-doped p-type silicon single crystal plate 81. The first and second layer-to-layer insulation films 84a, 86a are formed thereon via a gate 85 and an anode 87a is provided on the uppermost layer. The layers are etched in sequence by using a photoresist pattern as a mask to open a cavity 50. At this time, the end of the layer 82a is protruded inside of the end face of the layer 83a and the end of the gate 85 is set backward of the end face of the film 84a. In this way, the field-emission emitter of high emission efficiency is obtained which is well reproductive and easy to manufacture.</p> |
