| 摘要 |
<p>PURPOSE: To prevent the generation of defects of micropores and dielectric breakdown of an oxide film caused by the stress of the oxide film by first annealing a semiconductor substrate and by growing a gate oxide film by wet- oxidizing the substrate in a mixed atmosphere of oxygen and hydrogen at low temperature and then by second annealing the substrate in a nitrogen atmosphere. CONSTITUTION: A semiconductor substrate 10 is put in an oxide film growing tube and is first annealed in an atmosphere of nitrogen at about 650 deg.C to reduce roughness of the surface of the semiconductor substrate and then a gate growing oxide film 12 is immediately grown in an atmosphere of oxygen and hydrogen. When the gate growing oxide film 12 is grown, the temperature of the substrate is held at about 820 deg.C. OH groups are produced by oxygen and hydrogen gases, and micropores or fine defects are effectively prevented to reduce the stress of the oxide film, which can produce a uniform film having no local field focusing phenomenon. After the gate oxide film is grown, the substrate 10 is second annealed in the tube at about 950 deg.C.</p> |
