| 摘要 |
PURPOSE: To obtain self-alignment applied to a nonplanar device by forming the opening of a photo-resist layer by an image inversion method, lifting off a dielectric layer and a metallic layer and forming a spacer. CONSTITUTION: An opening B0 with overhang side sections F1 is formed to a photo-resist layer 8 deposited on a semiconductor layer 5 by an image inversion method. A first metallic layer 9 forming a first electrode contact E is deposited into the opening B0 , and a first dielectric layer 10 in thickness thicker than the value of a slight distance is further deposited. The dielectric layer 10 and the metallic layer 9 in the periphery of the first contact E left as it is sealed in a capsule by the dielectric material 10 are removed by a lift-off method. A spacer 12 centering around the first contact E sealed in the capsule is formed. Accordingly, a transistor having extremely small size and excellent performance can be obtained.
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