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发明名称
INSULATING GATE BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD
摘要
申请公布号
JPH0794724(A)
申请公布日期
1995.04.07
申请号
JP19940075217
申请日期
1994.04.14
申请人
FUJI ELECTRIC CO LTD
发明人
SUMIDA HITOSHI
分类号
H01L29/78;(IPC1-7):H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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