发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain a photoresist compsn. having satisfactory sensitivity, excellent in solubility to a developer and giving a resist film excellent in heat resistance. CONSTITUTION:A positive type photoresist compsn. contg. alkali-soluble novolak resin and a 1,2-quinonediazido compd. or contg. alkali-soluble novolak resin having introduced 1,2-quinonediazido groups is blended with a single-dispersed polyhydroxystyrene polymer represented by the formula (where each of R<1> and R<2> is a 1-6C alkyl or H) and having a wt. average mol.wt. of 3,000-50,000 and a dispersion of 1.01-2.0 as a dissolution accelerator to obtain the objective photoresist compsn.
申请公布号 JPH0792671(A) 申请公布日期 1995.04.07
申请号 JP19930263012 申请日期 1993.09.27
申请人 SHIN ETSU CHEM CO LTD 发明人 OKAZAKI SATOSHI;NISHIKAWA KAZUHIRO;HATAKEYAMA JUN;UMEMURA MITSUO;WATANABE SATOSHI;ISHIHARA TOSHINOBU
分类号 G03F7/022;G03F7/004;G03F7/023;H01L21/027;(IPC1-7):G03F7/022 主分类号 G03F7/022
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