| 摘要 |
PURPOSE:To form an amorphous silicon thin film in a uniform thickness by intermittently performing high-frequency discharge for generating plasma and, at the same time, limiting the radiating time during each discharging period shorter than the time during which a DC bias voltage generated on the high-frequency impressing electrode side is saturated. CONSTITUTION:Film formation is performed by generating plasma 17 by introducing high-frequency electric power across a high-frequency impressing electrode 2 and grounding electrode 3. Regarding the high-frequency electric power, continuous high-frequency electric power 15 is used by operating a high-frequency power source 11 at the time of continuous discharge or the power source 11 and a waveform generator 13 are operated at the time of intermittent discharge. The high-frequency electric power from the high-frequency power source 11 is amplitude-modulated to obtain amplitude-modulated high-frequency electric power 16 by using a desired modulating signal 14 outputted from the waveform generator 13. |
