| 摘要 |
PURPOSE: To attain information storage of very high density for a storage medium by impressing an electric field, with a probe tip of a scanning tunneling microscope, to the data storage medium consisting of the charge transfer complex film of an organic metallic charge transfer comple material, and thereby causing change of electron density on the surface of the medium. CONSTITUTION: The tip end of the probe 2 of a scanning tunnelling microscope very close to an organic metallic charge transfer complex film 1. This tunnel voltage is supplied to the film surface by a bias voltage power supply 8 and, if a gap between the probe tip end and the film surface is so small as to generate a tunnel effect, a tunnel current is indluced. Then, piezo-electric tri-axial actuator 3 forms a registration system for a device that controls in the x, y, z direction the movement of the probe tip end moving along the surface of the charge transfer complex film. These movements are controlled by a computer 5. As a result, the change in the electron density of this complex film 1 is used for storing binary data highly densely.
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