发明名称 |
MANUFACTURE OF LIGHT EMITTING DEVICE |
摘要 |
PURPOSE:To manufacture a light emitting device whose luminance is not declined in a high humidity environment by a method wherein a protective film whose main component is aluminum oxide are formed on the upper surface and side surfaces of an Al GaAs chip. CONSTITUTION:The p-type layer 12 side surface of an Al GaAs chip 10 is stuck on an adhesive sheet 30 and the chip 10 is subjected to a dipping treatment in ammonia-hydrogen peroxide system solution containing ammonia and hydrogen peroxide to form a primary protective film 20. The Al GaAs chip 10 with the adhesive sheet 30 is left under a room temperature for natural drying. After the drying is finished, the chip 10 is subjected to a dipping treatment in ammonia-hydrogen peroxide system solution containing ammonia and hydrogen peroxide to form a secondary protective film 21 while the p-type layer 12 side surface of the Al GaAs chip 10 is stuck on the adhesive sheet 30. With these treatments, a fine and uniform protective film 22 whose thickness is sufficiently large on the p-type layer 12 side and the n-type layer 11 side is formed on the upper surface and side surfaces of the A-l GaAs chip 10. With this constitution, a light emitting device whose luminance is not declined in a high humidity environment can be manufactured. |
申请公布号 |
JPH0794777(A) |
申请公布日期 |
1995.04.07 |
申请号 |
JP19930261903 |
申请日期 |
1993.09.24 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
YAMADA MASAHITO;SAKURAI TADASHI |
分类号 |
H01L33/30;H01L33/56;H01L33/62 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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