| 摘要 |
The method includes the steps of forming a first insulating film (22) and a first conducting layer (23) on a Si substrate (21), etching the layer (23) to form pads (25), forming a second insulating film (26) thereon, removing the film (26) on the pads (25) to expose the pads, forming a second conducting layer (28) thereon, removing the layer (28), except the layer portion on the pads and on the film (26) between the pads to form a resist film (30), forming a third insulating film (31) thereon, removing the film (31) on the pads to expose the film (30) to form a contact window (33), and forming wirings connected to the film (30) through the window (33), thereby preventing poor contacts and obtaining an exact resistance value.
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