Verfahren zur Herstellung eines strukturierten Halbleiterkörpers

摘要

The invention relates to a patterned semiconductor body in which silicon molecular-beam epitaxy (Si-MBE) is first used to generate a step between a monocrystalline Si semiconductor region and adjacent polycrystalline silicon. This step is removed by an oxidation process applied to the whole area and a subsequent etching process. An essentially planar surface is produced having a step height of, for example, less than 10 nm.