FABRICATIONG METHOD OF SEMICONDUCTOR DEVICE HAVING MULTI-LAYER STRUCTURE

摘要

The method includes the steps of forming a photoresist pattern (5a) on the interlayered insulating film (4) formed on the pillar (3), selectively etching the insulating film (4) to form an opening part on the pillar (3), removing the photoresist (5a) to apply a photoresist layer (5b) for flattening thereon, etching the photoresist layer (5b) and the insulating film (4) to expose the pillar, and forming a second metal pattern (6) thereon, thereby forming a multilayered wiring structure to prevent the insulating film from remaining on the pillar.