Process for manufacturing a device having MIS transistors with a gate overlapping the lightly-doped source and drain regions.,申请号EP19900202859-传众专利搜索

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发明名称	Process for manufacturing a device having MIS transistors with a gate overlapping the lightly-doped source and drain regions.
摘要
申请公布号	EP0426250(B1)	申请公布日期	1995.04.05
申请号	EP19900202859	申请日期	1990.10.29
申请人	PHILIPS ELECTRONICS N.V.	发明人	VERHAAR, ROBERTUS
分类号	H01L21/336;H01L21/8234;H01L27/088;H01L29/423;H01L29/78;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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