Semiconductor bipolar device and method of manufacturing the same.

摘要

An n<+> buried layer (3) is formed on a surface of p<-> semiconductor substrate (1). An n<-> epitaxial growth layer (5) and an n<+> diffusion layer (13) are formed on a surface of n<+> buried layer (3). A p<-> base region (7) and p<+> external base region (11) adjoining to each other are formed on a surface of n<-> epitaxial growth layer (5). An n<+> emitter region (9) is formed at a surface of p<-> base region (7). An emitter electrode (15) is formed adjacently to n<+> emitter region (9). Emitter electrode (15) is made of polycrystalline silicon doped with phosphorus at a concentration from 1x10<2><0>cm<-><3> to 6x10<2><0>cm<-><3>. <IMAGE>