| 摘要 |
PURPOSE:To synthesize the title thick diamond film at high speed without damaging a substrate by decomposing or vaporizing a carbon source in hot plasma, and depositing a diamond film on the substrate surface. CONSTITUTION:The substrate 14 is placed on a water-cooled substrate holder 15 and kept at 800-1200 deg.C, and simultaneously the inside of a vacuum vessel is depressurized to 0.21-0.5atm. A voltage is then impressed on an anode 11 and on a cathode 12 through a DC power source 13, and hot plasma 18 at 10<3>-10<16>cm<-3> density and 1000-3000 deg.C is produced by the electric discharge in the transition region from a glow discharge to an arc discharge. A carbon source is simultaneously supplied, decomposed, or vaporized, and the diamond film 16 is formed on the substrate 14. |
