| 摘要 |
<p>Forming a trench isolation structure in an IC comprises: providing a semiconductor substrate, the substrate having a trench isolation region and an active region formed therein, the trench isolation regions abutting the active region to form a trench corner; forming a first dielectric layer overlying the active region; wherein the first dielectric layer is formed only on the active region and abuts the trench corner; forming a second dielectric layer overlying the trench corner, wherein the first and second dielectric layers form a gate dielectric layer, the gate dielectric layer having a thickness is less than 20nm; forming a transistor gate electrode overlying the trench corner, wherein the gate dielectric layer lies between the trench corner and the transistor gate electrode.</p> |
