| 摘要 |
In a semiconductor pulsation laser, an active layer includes a double quantum well structure including two quantum wells. Each of these quantum wells has a plurality of discrete energy levels in which the difference in energies between these energy levels is more than 10 nm when calculated as a wavelength equivalent. These two quantum wells are arranged close each other in the double quantum well structure so that each of the discrete energy levels is divided into two energy levels so that the difference in energies between these two energy levels is equivalent to a difference in energies that provides a frequency at which both electrons and holes are alternatingly present in the two quantum wells in a range from 100 MHz to 10 GHz. The gain at which laser oscillation occurs by recombination of electrons and holes is attained only when both electrons and holes are present in the same well at the same time. As a result, laser oscillation occurs intermittently when both electrons and holes are present in the same well, whereby a pulsation laser is realized.
|
