发明名称 Method for manufacturing a pyrodetector apparatus
摘要 A method for manufacturing a pyrodetector apparatus having hole structures produced by electrochemical etching in a first principal face of a substrate of n-doped, monocrystalline silicon, so that a structured region arises in the substrate. At least one pyrodetector element is arranged on the first principal face above the structured region.
申请公布号 US5403752(A) 申请公布日期 1995.04.04
申请号 US19940242243 申请日期 1994.05.13
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BRUCHHAUS, RAINER;LEHMANN, VOLKER
分类号 G01J5/28;B81C1/00;G01J5/34;G02B6/122;H01L21/28;H01L21/3063;H01L37/02;(IPC1-7):H01L21/306;H01L21/76 主分类号 G01J5/28
代理机构 代理人
主权项
地址