发明名称 |
Method for manufacturing a pyrodetector apparatus |
摘要 |
A method for manufacturing a pyrodetector apparatus having hole structures produced by electrochemical etching in a first principal face of a substrate of n-doped, monocrystalline silicon, so that a structured region arises in the substrate. At least one pyrodetector element is arranged on the first principal face above the structured region.
|
申请公布号 |
US5403752(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19940242243 |
申请日期 |
1994.05.13 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BRUCHHAUS, RAINER;LEHMANN, VOLKER |
分类号 |
G01J5/28;B81C1/00;G01J5/34;G02B6/122;H01L21/28;H01L21/3063;H01L37/02;(IPC1-7):H01L21/306;H01L21/76 |
主分类号 |
G01J5/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|