| 摘要 |
PURPOSE:To stably produce a high quality PZT or PLZT ferroelectric thin film. CONSTITUTION:Each structural element of PZT, that is, Pb(ZrxTi1-x)O3 (0<x<1), is individually and alternately supplied in the cycles of the order of a Ti raw material, a Pb raw material, a Zr raw material and the Pb raw material in O2 or O3 atmosphere. The PZT corresponding to the stoichiometric composition expressed by this molecular formula is formed into a monomolecular layer or multilayer on a substrate by alternately depositing in the cycle of the order of Ti, Pb, Zr, Pb while controlling individually the depositing quantity and depositing time of each structural element except oxygen. The PZT thin film having the structure made by laminating the molecular layer is formed by repeating this process plural times until the desired film thickness is obtained. |
