发明名称 Process for producing a solar cell by means of epitaxial growth process
摘要 A process for effectively producing an inexpensive solar cell by using a metallic substrate and growing a polycrystal semiconductor layer of a large crystal grain size. And a process for effectively producing a high quality and inexpensive solar cell by forming a polycrystal semiconductor layer of a large crystal grain size and with a reduced defect level density in grain boundaries on a polycrystal semiconductor layer of a small crystal grain size which serves as a crystal seed.
申请公布号 US5403771(A) 申请公布日期 1995.04.04
申请号 US19940190584 申请日期 1994.02.02
申请人 CANON KABUSHIKI KAISHA 发明人 NISHIDA, SHOJI;YONEHARA, TAKAO
分类号 H01L31/0368;H01L31/0392;H01L31/072;H01L31/075;H01L31/18;(IPC1-7):H01L21/20;H01L21/320 主分类号 H01L31/0368
代理机构 代理人
主权项
地址