发明名称 |
Process for producing a solar cell by means of epitaxial growth process |
摘要 |
A process for effectively producing an inexpensive solar cell by using a metallic substrate and growing a polycrystal semiconductor layer of a large crystal grain size. And a process for effectively producing a high quality and inexpensive solar cell by forming a polycrystal semiconductor layer of a large crystal grain size and with a reduced defect level density in grain boundaries on a polycrystal semiconductor layer of a small crystal grain size which serves as a crystal seed.
|
申请公布号 |
US5403771(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19940190584 |
申请日期 |
1994.02.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NISHIDA, SHOJI;YONEHARA, TAKAO |
分类号 |
H01L31/0368;H01L31/0392;H01L31/072;H01L31/075;H01L31/18;(IPC1-7):H01L21/20;H01L21/320 |
主分类号 |
H01L31/0368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|