| 摘要 |
PURPOSE:To provide a method for cutting a semi-conductor single crystal ingot wherein an as-cut wafer with a warpage in the opposite direction being equal to the amt. of warpage generated by coating of a polysilicon performed as an extrinsic gettering can be obtd. CONSTITUTION:At least one air pad 6 and a blade displacement sensor are provided in the neighborhood of a blade part being close to an inner peripheral blade 4 of an inner peripheral blade-type cutting machine. For cutting a single crystal ingot 1, an air pressure is applied in an air pad 6 and the inner peripheral blade 4 is pushed by means of the apex of the air pad 6 to bend the blade 4. This amt. of bending is respectively controlled in such a way that it is gradually increased up to the point where the apex of the blade reaches the axial center of the single crystal ingot 1 and then, after it passes through the axial center, it is gradually decreased and it is based on the amt. of displacement of respective position detected by means of the blade displacement sensor. It is possible thereby to give a specified warpage to the as-cut wafer. |
