| 摘要 |
A semiconductor vacuum device including a semiconductor substrate 3, an insulator film 2 formed on the substrate 3, and a single crystal semiconductor film 1 formed on the insulator film 2. The single crystal semiconductor film 1 has a first and a second tapered edge opposite to one another but spaced apart over a gap formed in the insulator film 2. The first tapered edge acts 6 as a cathode and the second tapered edge acts as a gate 7, the substrate 1 acting as an anode into which said electrons emitted from the cathode above.
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