Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder

摘要

Semiconductor epitaxial wafers consisting of an epitaxial film and its substrate can be removed, in accordance with the present invention, from a substrate supporting component, without breaking the wafers into pieces after completion of vapor growth. The carbonaceous powder according to the present invention can greatly and effectively decrease the breaking of wafers, as compared with the conventional SiO2 or SiC-coated substrate supporting components.