发明名称 |
Process for formation of resist patterns |
摘要 |
A pattern formation process using a positive-working resist material of the formula (I): <IMAGE> (I) in which R1 and R2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.
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申请公布号 |
US5403699(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19930100343 |
申请日期 |
1993.08.02 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKECHI, SATOSHI;NAKAMURA, YUKO;KOTACHI, AKIKO |
分类号 |
G03F7/039;G03F7/32;(IPC1-7):G03F7/32 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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