发明名称 |
Semiconductor bond pad structure and method |
摘要 |
A method for forming an improved bonding pad structure. A bond pad structure is formed by depositing a barrier layer over an underlying region of a semiconductor device, and then depositing a first conductive layer over the barrier layer. The barrier layer and conductive layer are then patterned and etched to define a conductive region. In a preferred embodiment, the conductive region is formed in the shape of a grid. A second conductive layer is deposited over the conductive region and a portion of the exposed underlying region. The second conductive layer makes a good adhesive contact with the underlying region, thus preventing bond pad lift off.
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申请公布号 |
US5403777(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19940182845 |
申请日期 |
1994.01.14 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
BRYANT, FRANK R.;CHEN, FUSEN E. |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/00;H01L21/44 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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