发明名称 |
Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD |
摘要 |
Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH4 to WF6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.
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申请公布号 |
US5403779(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19920928335 |
申请日期 |
1992.08.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOSHI, RAJIV V.;CUOMO, JEROME J.;DALAL, HORMAZDYAR M.;HSU, LOUIS L. |
分类号 |
H01L21/28;H01L21/312;H01L21/316;H01L21/318;H01L21/768;H01L23/498;H01L23/522;H01L23/532;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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