TREATING METHOD OF OUTER SEMICONDUCTOR LAYER FOR RUBBER, PLASTIC INSULATED POWER CABLE

摘要

PURPOSE:To allow the formation of an outer semiconductive layer treating part regardless of the skill of worker by forming a shrinkage tube layer of a 'Teflon(R)' or silicon rubber based shrinkage tube on a conductive paint applied to a cable insulator exposed by removing an outer semiconductive layer from a cable and then heating the shrinkage tube layer. CONSTITUTION:A 'Teflon(R)' or silicon rubber based shrinkage tube, which does not adhere to the surface of a cable insulator 2 even when it is thermally fused, is fitted over the part contiguous to the outer semiconductive layer 1 of the cable insulator 2 being exposed by cutting off the outer semiconductive layer 1 at the terminal part of a cable and then it is heated to form a shrinkage tube layer 4 over the insulator 2 and the part 3 applied with conductive paint. A heating pipe 5 is disposed on the outside thereof in order to heat the insulator 2 at a temperature higher than the melting point thereof thus fusing the surface thereof. Consequently, the flat inner face of the tube is shifted to the part 3 by the expanding force of the insulator 2 and the compressive pressure of the tube layer 4 resulting in the formation of a flat and voidless semiconductive layer treating part.