| 摘要 |
<p>PURPOSE:To form a wiring for leading out source and drain electrodes with a metal film, without needing the CVD method not so as to cause a cell reaction between this film and pixel electrode during its patterning step and improve the throughput. CONSTITUTION:An Mo film 122 is formed on the top face of an aluminium film for a drain wiring 116 connected to source and drain electrodes 106, a resist is coated on the top face of the film 122, and exposure and development of the resist are made. Due to the action of the film 122, a developer liquid for the resist does not arrive at the aluminium film, thereby preventing the cell reaction between the electrode 117 and this film. The end part of the film 122 is cut like a pent roof by an etching liquid for the aluminium film, broken to float in the liquid and readily dissolved. Therefore flakes of the film 122 does not adhere to other portions and shortcircuit is prevented.</p> |
