| 摘要 |
<p>PURPOSE:To provide an exposure mask and a projecting exposure method using this exposure mask avoiding anisotropic deformation caused by the heat absorption of the mask so as to obtain desirable image focusing performance only by correcting the change of magnification. CONSTITUTION:An exposure mask with specified patterns formed for projecting exposure on a projected base is provided with a glass base 101, a heat- conductive film 102 layer formed in such a way as to cover the nearly whole surface of the glass base 101, with substantially higher heat conductivity than the glass base 101 and with penetrability to exposure wavelength, and a pattern 103 layer formed in such a way as to be in contact with the heat-conductive film 102. In a projecting exposure method, this exposure mask is illuminated by illuminating light of a specified wavelength area, and the image of the patterns 103 formed at the exposure mask is focused on the projected base by a specified image focusing characteristic through a projecting optical system, and the change of the image focusing characteristic generated according to the thermal deformation quantity of the exposure mask due to the absorption of the illuminating light is corrected.</p> |
