SIMULATION METHOD FOR STRUCTURE OF SEMICONDUCTOR CROSS SECTION

摘要

PURPOSE:To accurately draw a structure of a cross section by drawing a diagram in a desired pixcel value to a desired position of a cross section display pattern to revise the shape of the cross section. CONSTITUTION:A resist display region 51 displayed as a mask pattern when the region is normal is displayed on an Al display region 43a indicating an Al layer being an Al wiring layer. When it is simulated that a residue remains by a defect of development in the case of patterning of the mask pattern, a resist display region 51a indicating the residue is additionally drawn to a location where no mask pattern is substantially in existence. A pattern where an Al display region 43b indicating a short-circuit part is drawn is obtained by drawing an upper layer based on the state. Thus, when residual development is in existence in the development of a resist pattern for patterning of the wiring layer, the short-circuit of the wiring layer is simulated.