| 摘要 |
PURPOSE:To prevent the degradation of fidelity (halation) and the degradation of dimensional accuracy caused by standing wave effect without generating the fall and exfoliation of photoresist at the time of forming a fine photoresist pattern. CONSTITUTION:At the time of exposing and developing photoresist 5 applied onto a semiconductor substrate 1 to form a photoresist pattern, an exposure light absorbent is contained in the lower layer of the photoresist 5, and an organic film 7 is interposed to make dissolution proceed in the anisotropic state at the time of being submerged in a photoresist developer, water or an organic solvent. The lowering of contact area between the organic film 7 and the photoresist 5 after developing is thereby suppressed. |
