| 摘要 |
<p>PURPOSE:To conduct alignment in a photolithographic process only at one time by using only a first photo-mask forming a transistor gate pattern and a second photo-mask simultaneously forming a pixel electrode and a wiring electrode. CONSTITUTION:An electrode film, an insulating film and a semiconductor thin- film are shaped onto an insulating substrate 0. A transistor gate pattern containing a gate electrode 9, a gate insulating film 10 and a thin-film semiconductor region 11 is formed by using a first photo-mask. A conductive film is formed onto the gate pattern. Lastly, the conductive film is patterned by employing a second photo-mask aligned with the gate pattern. Consequently, a drain electrode (a pixel electrode) 15B and a source electrode (a wiring electrode) 15A in the semiconductor region 11 are shaped. Inter-electrode insulating films 14 are formed onto the insulating substrate 0 so as to surround and bury the side end sections of the gate electrode 9 in the process.</p> |
