| 摘要 |
<p>PURPOSE:To enable a semiconductor manufacturing suscepter to be enhanced in plasma resistance, improved in thermal uniformity, and elongated in service life by a method wherein an aluminum nitride sintered body is used as a base body, and an aluminum nitride thin film is deposited on the surface of the base body. CONSTITUTION:An aluminum nitride thin film 3 is formed as thick as 0.001 to 1.0mm on a sintered base body 2 whose main component is aluminum nitride. Furthermore, a heat releasing circuit 4 and/or a conductive circuit 5 are formed inside the base body 2. If the thin film 3 is smaller than 0.0001mm in thickness, it is lessened in service life, and if it exceeds 1.0 in thickness, it deteriorates in productivity due to that it is elongated in deposition time. The aluminum nitride sintered body is an excellent insulator which is above 10<13>OMEGA-cm in volume resistivity and 4X10<-6> to 5X10<-6>/ deg.C or small in thermal expansion coefficient and excellent in resistance to a thermal shock, so that it hardly cracks even if it changes suddenly in temperature. The aluminum nitride sintered body is also excellent in thermal conductivity. An aluminum nitride thin film is formed through a vapor method, so that it, is uniform in structure, high in impurity, and excellent in plasma resistance.</p> |
