| 摘要 |
PURPOSE:To prevent the short-circuit of strap contact/bil line contact, by forming a bit line after a second insulating film is deposited on the whole surface of a substrate, the second insulating film on the region where bit line contact is to be formed is eliminated, and a connection hole for bit line contact formed. CONSTITUTION:After a word line 18 is formed, an SiN film 20 is deposited on the whole surface of a substrate. The SiN film 20 on the region 22 where strap contact is to be formed, and the SiN film 20 on the region 23 where bit line contact is to be formed are eliminated at the same time. On the whole surface of the substrate, a polycrystalline silicon film is deposited up to the height of the word line. The polycrystalline silicon film is eliminated so as to be buried up to the height of the word line. Thus a conducting layer 24a for strap contact and a conducting layer 24b for bit line contact are formed. After a BPSG film 26 is deposited on the whole surface of the substrate and reflowed, the BPSG film 26 on the region where bit line contact is to be formed is eliminated, and a connection hole for bit line contact is formed. After that, bit lines 28, 29 are formed. Thereby short-circuit can be prevented. |
