| 摘要 |
PURPOSE:To obtain the excellent quantum effect and to provide many quantum wires in a small area by forming channel parts in the vicinities of doping parts among narrow forbidden-band semiconductor layers and the heterojunction interfaces of the narrow forbidden-band semiconductor layers and narrow wire forbiden-band semiconductor layers. CONSTITUTION:First doping parts 2a, 2a... comprise Al0.22Ga0.78As, and narrow forbidden-band semiconductor layers 3, 3.... comprise GaAs. Therefor, the difference in electronic affinities is 0.22eV. At this time, the diffusing distance of the electrons from the first.doping parts 2a, 2a... become about 150 A. Therefore, the separating distance between first doping parts 2a, 2a... and the narrow forbidden-band semiconductor layers 3, 3... becomes about 50 A. Thus, quantum- wire channel parts 6, 6... having the width and thickness of 100 A or less respectively are obtained, and the quantum wires indicating the excellent quantum effect can be obtained. In this quantum-wire structure, the channel parts 6, 6... can be constituted in the vertical direction with respect to the surface of a substrate 1 many layers. Therefore, many quantum wires can be provided in the small area. |
